Effect of MBE Growth Conditions on Multiple Electron Transport in InN |
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| Authors: | Tamara B Fehlberg Chad S Gallinat Gilberto A Umana-Membreno Gregor Koblmüller Brett D Nener James S Speck Giacinta Parish |
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| Affiliation: | (1) School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, 6009, Australia;(2) Materials Department, University of California, Santa Barbara, 93106-5050, USA |
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| Abstract: | A quantitative mobility spectrum analysis (QMSA) of multiple magnetic field data has been used to determine the transport
properties of bulk and surface electron species in InN films, grown by plasma-assisted molecular beam epitaxy (PAMBE) with
varying substrate temperatures and In/N flux ratios. While all films have similar bulk electron densities, ∼4 × 1017 cm−3, the highest mobility was obtained in the highest growth temperature film (3100 cm2/V s at 150 K), while In-rich growth also gave good mobility values even at a much lower growth temperature. The surface sheet
electron concentration increased with surface roughness, which increased with N-flux during growth. |
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| Keywords: | InN transport QMSA multiple carrier analysis MBE growth |
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