| SnO2超微粒非晶薄膜对n—Si光电效应的影响 |
| |
| 引用本文： | 王雅静,姜月顺.SnO2超微粒非晶薄膜对n—Si光电效应的影响[J].沈阳化工学院学报,1998,12(4):271-275. |
| |
| 作者姓名： | 王雅静 姜月顺 |
| |
| 作者单位： | [1]沈阳化工学院 [2]吉林大学 |
| |
| 摘 要： | 用等离子激活化学气相沉积（ＰＥＣＶＤ）法制备了ＳｎＯ２超微粒非晶薄膜。Ｘ－光电子能谱分析结果表明ＳｎＯ２中的Ｏ／Ｓｎ经超过化学计量比。ｎ－Ｓｉ和ＳｎＯ２／ｎ－Ｓｉ的表面光电压谱显示，ＳｎＯ２薄膜的处理条件不同，光电压响应所需光强也不同。将ＳｎＯ２薄膜沉积在ｎ－Ｓｉ上，可使其光电转换效率提高３个数量级以上，并且也能使ｎ－Ｓｉ光电流和光电压有所提高。
|
| 关 键 词： | 光电压 二氧化锡 PEVCD 非晶薄膜 硅 |
Study on Photoelectric Characterization of SnO 2/n Si Film |
| |
| Wang Yajing.Study on Photoelectric Characterization of SnO 2/n Si Film[J].Journal of Shenyang Institute of Chemical Technolgy,1998,12(4):271-275. |
| |
| Authors: | Wang Yajing |
| |
| Abstract: | SnO 2 films are deposited on silicon by PECVD. Character analytical results shown that SnO 2 film is porous ultra fine particle thin film. There is more chemi sorbed oxygen in SnO 2 film. Measurement and analyses surface photo voltage spectrum of SnO 2/n Si and n Si are revealed that: photo intensity of photo voltage response is different when SnO 2 film is handled in different condition. Efficiency of photoelectric transformation of SnO 2/n Si is over 10 3 times of n Si. Surface state trap, formed by SiO x in interface of SnO 2 and Si, benefits separation of electron and production of hole under illumination. |
| |
| Keywords: | SnO 2 film n Si surface photo voltage spectroscopy photo electron |
| 本文献已被 CNKI 维普 等数据库收录！ |
