| (La,Pr)2/3Sr1/3MnO3薄膜激光诱导电阻效应 |
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| 引用本文： | 赵省贵,陈长乐,金克新,罗炳成,高国棉,陈钊,韩立安.(La,Pr)2/3Sr1/3MnO3薄膜激光诱导电阻效应[J].功能材料,2006,37(9):1395-1397. |
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| 作者姓名： | 赵省贵 陈长乐 金克新 罗炳成 高国棉 陈钊 韩立安 |
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| 作者单位： | 1. 西北工业大学,理学院,陕西,西安,710072;西安科技大学,陕西,西安,710054
2. 西北工业大学,理学院,陕西,西安,710072 |
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| 基金项目： | 国家自然科学基金
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国家自然科学基金 |
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| 摘 要： | 研究了钙钛矿锰氧化物La2/3Sr1/3MnO3和Pr2/3Sr1/3MnO3单晶薄膜的激光诱导电阻变化特性.低温铁磁金属相,激光诱导使薄膜的电阻增大,而在顺磁绝缘相则电阻减小,同时薄膜的绝缘体-金属相变(IMT)转变温度Tp向低温方向移动.对于Pr2/3Sr1/3MnO3薄膜,当激光功率为22mW时,光致电阻相对变化的最大值约为9.6%.光诱导效应致使薄膜的电阻发生变化,并使其IMT的转变温度点向低温方向移动,主要是由于光子能激发eg向下电子的跃迁,改变体系自旋极化方向.
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| 关 键 词： | 钙钛矿薄膜 光诱导效应 电子自旋 |
| 文章编号： | 1001-9731(2006)09-1395-03 |
| 收稿时间： | 2005-12-29 |
| 修稿时间： | 2006-04-28 |
Photo-induced effect on resistance of (La,Pr)2/3Sr1/3MnO3 thin films |
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| ZHAO Sheng-gui,CHEN Chang-le,JIN Ke-xin,LUO Bing-cheng,GAO Guo-mian,CHEN Zhao,HAN Li-an.Photo-induced effect on resistance of (La,Pr)2/3Sr1/3MnO3 thin films[J].Journal of Functional Materials,2006,37(9):1395-1397. |
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| Authors: | ZHAO Sheng-gui CHEN Chang-le JIN Ke-xin LUO Bing-cheng GAO Guo-mian CHEN Zhao HAN Li-an |
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| Abstract: | The photo-induced effect on the resistance of manganite Pr2/3Sr1/3MnO3 and La2/3Sr1/3MnO3 thin films have been investigated. The results shows that the resistance of the film irradiated by the laser with wavelength of 532nm increases in ferromagnetic-metallic state and decreases in paramagnetic-insulator state. The maximum of photo-induced relative change in resistance is about 9.6% for PSMO thin film. The insulator-metal transition temperature shifts to the lower temperature due to the photo exciting of the down-spin eg electrons and destroying the spin order system of the thin film. |
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| Keywords: | perovskite thin film photo-induced effect electron spin |
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