两种典型结构强流自箍缩二极管技术研究

主要介绍了箍缩聚焦二极管和自箍缩离子束二极管的研究进展。重点介绍了近几年发展的阳极杆箍缩聚焦二极管的理论模拟和实验结果，在“闪光二号”加速器和2MV脉冲功率驱动源上进行了阳极杆箍缩二极管实验，二极管输出电压1．8—2．1MV，电流40—60kA，脉宽（FWHM）50～60n8，1m处的脉冲X剂量约20～30mGy，焦斑直径约Imm，X射线最高能量1．8MeV。在“闪光二号”加速器上开展了高功率离子束的产生和应用研究，给出了自箍缩反射离子束二极管的结构和工作原理，实验获得的离子束峰值电流～160kA，离子的峰值能量-500keV，开展了利用高功率质子束轰击19F靶产生6～7MeV准单能脉冲γ射线，模拟x射线热一力学效应等应用基础研究。

Research on two typical intense current self pinching diodes

Structures of several types of intense pinching diodes were introduced. The latest simulation and experiment results on rod pinch focusing diodes were introduced. Experimental researches were carried out on FLASH II and 2 MV pulsed power drivers. The voltage of RPD is 1.8 ～ 2.1 MV, the current is 40 ～ 60 kA, the FWHM is 50 ～ 60 ns. The X-ray dose at 1 m from the diode in the forward direction was about 20 ～ 30 mGy. The spot diameter was about 1 mm, the maximum energy was 1. 8 MeV. The preliminary research results for generation and application of high power ion beam ( HPIB) on the FLASH Ⅱ accelerator were reported. The structure and principle of pinch reflex ion beam diode were introduced. The HPIB peak current of ～ 160 kA is obtained with a peak energy of ～ 500 keV. The experimental investigations of generating 6 ～ 7 MeV quasi-monoenergetic pulsed γ-rays with high power ion (proton) beams striking ~(19)F target are presented. In addition, the research results for thermal-mechanical effects on the material irradiated with HPIB applied to simulation X-ray were also discussed.