Surface morphology and I-V characteristics of single-crystal,polycrystalline, and amorphous silicon FEA's |
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| Authors: | Jong Duk Lee Byung Chang Shim Hyung Soo Uh Byung-Gook Park |
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| Affiliation: | Dept. of Electr. Eng., Seoul Nat. Univ.; |
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| Abstract: | This letter reports the surface morphology and current-voltage (I-V) characteristics of single-crystal silicon (c-Si), polycrystalline silicon (poly-Si), and amorphous silicon (a-Si) field emitter arrays (FEAs). As-deposited a-Si film has a smoother surface than poly-Si film. The surface morphology of the a-Si remains smooth even after phosphorus doping and oxidation at 950°C to be improved in emission characteristics, i.e., smaller anode current deviation among arrays smaller gate current, and higher failure voltage than those of poly-Si FEAs. Such improved characteristics can be explained by the smooth surface morphology which is kept during doping and oxidation. The surface roughness and emission characteristics of a-Si FEAs are comparable to those of c-Si FEAs |
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