(1) Solid State Physics Laboratory, Lucknow Road, 110 054 Delhi, India
Abstract:
Growth of Hg1-xCdxTe epitaxial films by a new technique called asymmetric vapour phase epitaxy (ASVPE) has been carried out on CdTe and CZT
substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition
gradient and dislocation multiplication have been successfully solved. The epitaxial films have been electrically characterized
by using the Hall effect and capacitance-voltage (C-V) measurements.