Optical properties of sputtered hexagonal CdZnO films with band gap energies from 1.8 to 3.3 eV |
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Authors: | Xiangyang MaPeiliang Chen Ruijie ZhangDeren Yang |
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Affiliation: | State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China |
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Abstract: | CdxZn1−xO films in a wide range of Cd contents have been grown by reactive direct-current magnetron sputtering. At x ≤ 0.66, the sputtered CdxZn1−xO films are of single hexagonal phase. The optical band gap energies of the CdxZn1−xO films decrease from ∼3.3 eV at x = 0 to ∼1.8 eV at x = 0.66. Correspondingly, the near-band-edge photoluminescence is tuned in a wide visible region from ∼378 to 678 nm. Moreover, the ultraviolet irradiation enhanced PL from the CdxZn1−xO films has been observed. |
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Keywords: | 78 55 Et 61 66 Dk 81 40 Tv |
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