立方体AgBrCl硫增感光的电子行为

本文利用微波吸收相敏检测技术 ,同时获得了立方体AgBrCl乳剂中 ,在增感温度增加的条件下 ,自由光电子和浅束缚光电子的时间衰减曲线 ,分析了不同的硫增感产物随增感温度增加所起的陷阱效应。结果表明 ,在立方体AgBrCl乳剂中 ,硫增感初始阶段的增感产物主要是作为浅电子陷阱存在 ;随着增感温度增加至5 5℃时 ,增感产物浅电子陷阱效果最佳 ;如增感温度进一步增加 ,硫增感中心又变为深电子陷阱。文中还讨论了浅电子陷阱中浅束缚光电子衰减时间与阱深的依存关系。

Photoelectron Action in the Sulfur-Sensitized Cubic AgBrCl Emulsion

The decay characteristics of photoelectrons and shallow-trapped electrons have been obtained in the sulfur-sensitized cubic AgBrCl emulsion by microwave absorption and dielectric spectrum measure technique. With the continuous incnease of sensitizing-temperature,the effects of various electron depths have been analyzed.From the experiment results,we could conclude that:in cubic AgBrCl emulsion,the sulfur-sensitized grains at the early stage act as shallow electron traps,whereas with the increase of sensitizing temperature,the sulfur-sensitized centers will be turned into deep electron traps. The decay times of free electrons and shallow trapped electrons reach peak value at the temperature of 55℃.In addition,the relationship between the depths of different shallow traps and the decay times of shallow-trapped electrons have also been discussed.