| 低能电子光刻的蒙特卡罗模拟 |
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| 引用本文： | 张增明,肖沛,陈套,孙霞,丁泽军.低能电子光刻的蒙特卡罗模拟[J].现代科学仪器,2006(Z1):14-15. |
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| 作者姓名： | 张增明 肖沛 陈套 孙霞 丁泽军 |
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| 作者单位： | 1. 中国科技大学,天文与应用物理系,合肥,230026,中国
2. 中国科技大学,物理系,合肥,230026,中国 |
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| 基金项目： | 国家自然科学基金;安徽省自然科学基金;安徽省优秀人才培养计划 |
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| 摘 要： | Electron beam lithography(EBL)has been playing an important role in the fabrication of large-scale integrated semiconductor devices because of its high resolution.Although high-energy electrons are widely employed in the present EBL system,high-energy electrons can penetrate through the resist layer,lose most of their energies in the substrate and,thus,cause damage to the underlying substrate.
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Monte Carlo simulation for low-energy electron lithography |
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| ZHANG Zeng-ming,XIAO Pei,CHEN Tao,SUN Xia,DING Ze-jun.Monte Carlo simulation for low-energy electron lithography[J].Modern Scientific Instruments,2006(Z1):14-15. |
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| Authors: | ZHANG Zeng-ming XIAO Pei CHEN Tao SUN Xia DING Ze-jun |
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