| 长波阈为1.65μm的透射式负电子亲和势光阴极组成结构的设计 |
| |
| 引用本文： | 陶兆民.长波阈为1.65μm的透射式负电子亲和势光阴极组成结构的设计[J].电子与信息学报,1982,4(5):309-311. |
| |
| 作者姓名： | 陶兆民 |
| |
| 作者单位： | 中国科学院电子学研究所 |
| |
| 摘 要： | 透射式负电子亲和势GaAs光阴极已应用于成像器件。由于GaAs的禁带宽度为1.42eV,长波阈约为0.9μm。因此透射式负电子亲和势GaAs光阴极的工作波长范围为0.4—0.9μm。迄今尚未见报道长波阈大于1μm的透射式负电子亲和势Ⅲ-Ⅴ族化合物光
|
| 收稿时间： | 1981-12-30 |
THE COMPOSITIONAL STRUCTURE DESIGN OF A NEGATIVE ELECTRON AFFINITY TRANSMISSION MODE PHOTOCATHODE WITH 1.65μm THRESHOLD WAVELENGTH |
| |
| Tao Zhao-min.THE COMPOSITIONAL STRUCTURE DESIGN OF A NEGATIVE ELECTRON AFFINITY TRANSMISSION MODE PHOTOCATHODE WITH 1.65μm THRESHOLD WAVELENGTH[J].Journal of Electronics & Information Technology,1982,4(5):309-311. |
| |
| Authors: | Tao Zhao-min |
| |
| Affiliation: | Institute of Electronics; Academia Sinica |
| |
| Abstract: | In this paper, a transmissive NEA phatocathode with 1.65 μm threshold wavelength is proposed and designed, its compositional structure is as follows: InP→Al0.48 In0.52 As→Ga0.47 In0.53 As→Al0.48 In0.52 As→conduction coating→glass. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《电子与信息学报》浏览原始摘要信息 |
|
点击此处可从《电子与信息学报》下载全文 |
