Computer analysis on the static negative resistance due to the geometrical effect of a GaAs bulk element |
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Abstract: | Results of computer analysis on the static negative resistance of a GaAs bulk element with a geometrical effect are presented. It is shown that a static negative resistance appears across an overcritically doped GaAs element with a geometry of expanding cross section toward the anode as a result of the development of a stationary high-field domain at the expanding part of the element. These results are in good agreement with the reported experimental results. |
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