Growth and characterization of laser-deposited Ag-doped YBa2Cu3O7−x thin films on bare sapphire |
| |
Authors: | Dhananjay Kumar K M Satyalakshmi S S Manoharan M S Hegde |
| |
Affiliation: | (1) Solid State and Structural Chemistry Unit, Indian Institute of Science, 560 012 Bangalore, India;(2) Department of Metallurgy, Indian Institute of Science, 560 012 Bangalore, India |
| |
Abstract: | Microstructural and superconducting properties of YBa2Cu3O7−x thin films grownin situ on bare sapphire by pulsed laser deposition using YBa2Cu3O7−x targets doped with 7 and 10 wt% Ag have been studied. Ag-doped films grown at 730°C on sapphire have shown very significant improvement over the undoped YBa2Cu3O7−x films grown under identical condition. A zero resistance temperature of 90 K and a critical current density of 1·2×106 A/cm2 at 77 K have been achieved on bare sapphire for the first time. Improved connectivity among grains and reduced reaction rate between the substrate and the film caused due to Ag in the film are suggested to be responsible for this greatly improved transport properties. |
| |
Keywords: | Pulsed laser deposition Ag-doped YBa2Cu3O7− x thin film high critical current density sapphire |
本文献已被 SpringerLink 等数据库收录! |