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LPE growth of crack-free PbSe layers on Si(100) using MBE-Grown PbSe/BaF2CaF2 buffer layers |
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| Authors: | B. N. Strecker P. J. McCann X. M. Fang R. J. Hauenstein M. O’steen M. B. Johnson |
| Affiliation: | (1) School of Electrical and Computer Engineering and Laboratory for Electronic Properties of Materials, University of Oklahoma, 73019 Norman, OK;(2) Department of Physics, Oklahoma State University, 74078 Stillwater, OK;(3) Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, 73019 Norman, OK |
| Abstract: | Crack-free PbSe on (100)-oriented Si has been obtained by a combination of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) techniques. MBE is employed first to grow a PbSe/BaF2/CaF2 buffer structure on the (100)-oriented Si. A 2.5 μm thick PbSe layer is then grown by LPE. The LPE-grown PbSe displays excellent surface morphology and is continuous over the entire 8×8 mm2 area of growth. This result is surprising because of the large mismatch in thermal expansion coefficients between PbSe and Si. Previous attempts to grow crack-free PbSe by MBE alone using similar buffer structures on (100)-oriented Si have been unsuccessful. It is speculated that the large concentration of Se vacancies in the LPE-grown PbSe layer may allow dislocation climb along higher order slip planes, providing strain relaxation. |
| Keywords: | IV-VI semiconductors BaF2 CaF2 PbSe |
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