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100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation
Authors:Jun-ichi Nishizawa  Akihiko Murai  Hiroki Makabe  Osamu Ito  Tomoyuki Kimura  Ken Suto  Yutaka Oyama
Affiliation:

a Semiconductor Research Institute of Semiconductor Research Foundation, Kawauchi Aoba, Sendai 980-0862, Japan

b Department Materials Science and Engineering, Graduate School of Engineering, Tohoku University, Aramaki Aoba, Sendai 980-8579, Japan

Abstract:The tunnel injection transit time (TUNNETT) diodes with p+p+n+n?n+ structure were fabricated by liquid phase epitaxy (LPE). About 100 Å tunnel junction (p+n+) was successfully prepared by the double impurity diffusion of Ge and S during LPE growth. Continuous wave (CW) oscillation was realized at 51.520 GHz in the V-band cavity with the phase noise of ?60 dBc/Hz at 1 kHz bandwidth.
Keywords:TUNNETT  Microwave devices  Tunnel junctions  Transit time effect diodes  Liquid phase epitaxy  Impurity diffusion
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