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100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation |
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| Authors: | Jun-ichi Nishizawa Akihiko Murai Hiroki Makabe Osamu Ito Tomoyuki Kimura Ken Suto Yutaka Oyama |
| Affiliation: | a Semiconductor Research Institute of Semiconductor Research Foundation, Kawauchi Aoba, Sendai 980-0862, Japan b Department Materials Science and Engineering, Graduate School of Engineering, Tohoku University, Aramaki Aoba, Sendai 980-8579, Japan |
| Abstract: | The tunnel injection transit time (TUNNETT) diodes with p+p+n+n−n+ structure were fabricated by liquid phase epitaxy (LPE). About 100 Å tunnel junction (p+n+) was successfully prepared by the double impurity diffusion of Ge and S during LPE growth. Continuous wave (CW) oscillation was realized at 51.520 GHz in the V-band cavity with the phase noise of −60 dBc/Hz at 1 kHz bandwidth. |
| Keywords: | TUNNETT Microwave devices Tunnel junctions Transit time effect diodes Liquid phase epitaxy Impurity diffusion |
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