MAGFET based current sensing for power integrated circuit |
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| Authors: | Giovanni Busatto Roberto La Capruccia Francesco Iannuzzo Francesco Velardi Roberto Roncella |
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| Affiliation: | a Department of Automation, Electromagnetics, Information Engineering and Industrial Mathematics, DAEIMI, University of Cassino, Via G. Di Biasio, 43, 03043, Cassino, Italy;b Department of Information Engineering, University of Pisa, Via Diotisalvi 2, Pisa, Italy |
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| Abstract: | A new on-chip non-invasive integrated current sensing, compatible with standard CMOS technology, has been developed, using a 1.2 μm BiCMOS ALCATEL technology, to sense the current in the drain side of a power MOSFET. The circuit is based on a split-drain magnetic sensor, implemented on the same chip of an integrated gate driver for a power MOSFET. A CMOS biasing circuit with a differential current output is also developed. The simulation results of the current sensing show a conversion gain of 1.25 mV/mT. |
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