| GaAs/Si异质外延的新进展 |
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| 引用本文： | 黄善祥 郑有料. GaAs/Si异质外延的新进展[J]. 固体电子学研究与进展, 1991, 11(4): 324-331 |
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| 作者姓名： | 黄善祥 郑有料 |
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| 作者单位： | 南京电子器件研究所 210016(黄善祥，林金庭，陆正，沈浩瀛，王翠莲)，南京大学物理系 210008(郑有(火斗，张荣)，南京大学固体微结构实验室 210008(严勇)，南京大学固体微结构实验室 210008(冯端) |
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| 摘 要： | 本工作从原理和实验技术上证实了氯化物VPE技术可用于CaAs/Si异质外延.CaAs/Si外延层表面平整光亮.对外延层进行了组分测量、高分辨率电镜和X-射线衍射分析.结果表明,外延层是符合化学计量比的CaAs单晶,外延层浓度可控范围为10~(14)～10~(17)cm~(-3),纵向掺杂分布平坦.用这种材料制成MESFET样管,跨导为40mS/mm.
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| 关 键 词： | GaAs／Si 异质外延 外延生长 |
Advance of the GaAs/Si Heteroepitaxy |
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| Huang Shanxiang,Lin Jinting,Lu ZhengShen Haoying,Wang Cuilian. Advance of the GaAs/Si Heteroepitaxy[J]. Research & Progress of Solid State Electronics, 1991, 11(4): 324-331 |
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| Authors: | Huang Shanxiang Lin Jinting Lu ZhengShen Haoying Wang Cuilian |
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| Abstract: | In this work it was demonstrated theorstically and experimentally that the chloride VPE technique is available for the GaAs/Si heteroepitaxy. The surface of the GaAs/Si layers is flat and bright.The composition measurements X-ray deffraction analysis of the layers and HRTEM observion of the GaAs/Si interface were performed. The results indicate that the GaAs/Si layers are single crystal with GaAs stoichiormetry. The carrier concentration of GaAs/Si layers can be controlled in the range of 1014-1017 cm-3 with a flat longitudinal concentration profile. The GaAs/Si MESFETs with transconductances of 40mS/mm have been fabricated. |
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| Keywords: | [1] O. Zgareshi J.Electrochem. Soc. 119 (1972) 1430.[2] W. I. Wang Appl. Phys. Lett. 44(1984) 1149.[3] 陈福荫 固体电子学研究与进展 11(1991)2 137.[4] R. Cacloret L. Hollan J. B. Loyau et al. J. Crystal Growth 29(1975) 187 [5] P. E. Gre |
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