Electrical fluctuations in silicon double injection devices

Studies of the electrical noise behavior of indium-doped silicon P⁺πN⁺ double injection devices are reported. The work refers to the double injection portion of the device characteristic at a temperature of 77°K. The noise studied is attributed to fluctuations in the rate of recombination of carriers via the indium centers. From fitting theoretical and experimental results, the carrier lifetime is found to be 2.5 × 10⁻⁷ sec and the capture cross-section of neutral indium centers for electrons is determined to be 1.8 × 10⁻¹⁶ cm².