Properties of n type Ge-doped epitaxial GaAs layers grown from Au-rich melts |
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| Authors: | A.M. Andrews N. Holonyak Jr. |
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| Affiliation: | Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA |
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| Abstract: | Degenerate n-type GaAs epitaxial layers doped with Ge are grown from a Au-rich melt. The layers are typical of those produced via the alloy-regrowth process used to make contacts with AuGe or AuSb + 2% Ge. Traps are found in the forbidden gap with one trap induced by the AuGe complex identified at 160 meV above the valence band edge. |
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