Low- and high-field electron-transport parameters for unstrainedand strained Si1-xGex |
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| Authors: | Bufler F.M. Graf P. Meinerzhagen B. Adeline B. Rieger M.M. Kibbel H. Fischer G. |
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| Affiliation: | Inst. fur Theoretische Elektrotechnik und Mikroelektronik, Bremen Univ.; |
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| Abstract: | Ohmic minority and majority drift mobilities as well as saturation velocities are reported for unstrained and strained Si1-xGe x alloys up to z=0.31. The electron-transport model is verified by measurements of the in-plane majority drift mobility in strained Si1-xGex samples for various dopant and Ge concentrations. Saturation velocities are determined by full-band Monte Carlo simulations. There is no substantial decrease in the mobility perpendicular to the Si/SiGe interface for doping concentrations above 1019 cm-3 and growing x. In contrast, the saturation-drift velocity is strongly reduced with x |
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