In-situ ellipsometry studies of adsorption of Hg on CdTe(211)B/Si(211) and molecular beam epitaxy growth of HgCdTe(211)B |
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Authors: | G Badano Y Chang J W Garland S Sivananthan |
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Affiliation: | (1) University of Illinois at Chicago, 60607 Chicago, IL |
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Abstract: | We study the adsorption of Hg on CdTe(211)B using an 88-wavelength spectroscopic ellipsometer mounted on a commercial, molecular
beam epitaxy (MBE) chamber. A detailed analysis of the pseudo-dielectric function shows that Hg is present at the surface
both in chemisorbed and physisorbed form. Effective medium models for a mixture of chemisorbed and physisorbed Hg on the microscopically
rough CdTe surface could not fit our data. However, a proposed model in which a partial layer of physisorbed Hg sits on top
of a partial layer of chemisorbed Hg fits the measured pseudo-dielectric function well and yields precise values for the thicknesses
of the chemisorbed and the physisorbed Hg layers. These values change in the expected manner as a function of Hg flux, temperature,
and Te coverage. An analysis of the uncertainty in the measured thicknesses is carried out in detail, and a study of the limitations
of the ellipsometer used for this study is presented. The effects of these limitations on the precision and accuracy of in-situ
data are enumerated. |
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Keywords: | HgCdTe nucleation ellipsometry molecular beam epitaxy (MBE) substrate temperature |
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