Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode withhigh peak-to-valley current ratio at room temperature |
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| Authors: | Yan-Kuin Su Jia-Rong Chang Yan-Ten Lu Chuing-Liang Lin Kuo-Ming Wu Zheng-Xian Wu |
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| Affiliation: | Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan; |
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| Abstract: | We demonstrate a novel Al0.66In0.34As0.85Sb0.15-In 0.53Ga0.47As double-barrier resonant tunneling diode grown by metalorganic vapor phase epitaxy. A high peak-to-valley current ratio of 46 and a peak current density of 22 kA/cm2 were obtained at room temperature |
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