Deposition of tin oxide,iridium and iridium oxide films by metal-organic chemical vapor deposition for electrochemical wastewater treatment |
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Authors: | Songsak Klamklang Hugues Vergnes François Senocq Kejvalee Pruksathorn Patrick Duverneuil Somsak Damronglerd |
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Affiliation: | 1.Laboratoire de Génie Chimique,Toulouse Cedex 01,France;2.Department of Chemical Technology, Faculty of Science,Chulalongkorn University,Bangkok,Thailand;3.Centre Interuniversitaire de Recherche et d’Ingénierie des Matériaux,Toulouse Cedex 04,France |
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Abstract: | In this research, the specific electrodes were prepared by metal-organic chemical vapor deposition (MOCVD) in a hot-wall CVD
reactor with the presence of O2 under reduced pressure. The Ir protective layer was deposited by using (Methylcyclopentadienyl) (1,5-cyclooctadiene) iridium
(I), (MeCp)Ir(COD), as precursor. Tetraethyltin (TET) was used as precursor for the deposition of SnO2 active layer. The optimum condition for Ir film deposition was at 300 °C, 125 of O2/(MeCp)Ir(COD) molar ratio and 12 Torr of total pressure. While that of SnO2 active layer was at 380 °C, 1200 of O2/TET molar ratio and 15 Torr of total pressure. The prepared SnO2/Ir/Ti electrodes were tested for anodic oxidation of organic pollutant in a simple three-electrode electrochemical reactor
using oxalic acid as model solution. The electrochemical experiments indicate that more than 80% of organic pollutant was
removed after 2.1 Ah/L of charge has been applied. The kinetic investigation gives a two-step process for organic pollutant
degradation, the kinetic was zero-order and first-order with respect to TOC of model solution for high and low TOC concentrations,
respectively. |
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