| 工作在动态阈值MOS的特性研究 |
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| 引用本文： | 石立春.工作在动态阈值MOS的特性研究[J].现代电子技术,2006,29(23):127-128,130. |
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| 作者姓名： | 石立春 |
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| 作者单位： | 西安通信学院,陕西,西安,710106 |
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| 摘 要： | 通过将衬底和栅极连接在一起实现了MOSFET的动态阈值,DTMOS与标准的MOSFET相比具有更高的迁移率,在栅极电压升高时DTMOS阈值电压会随之降低,从而获得了比标准的MOSFET大的电流驱动能力。DTMOS是实现低电压、低功耗的一种有效手段。
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| 关 键 词： | 动态阈值 工作特性 MOSFET 栅极 |
| 文章编号： | 1004-373X（2006）23-127-02 |
| 收稿时间： | 2006-08-16 |
| 修稿时间： | 2006-08-16 |
Performance Study of MOS Working in Dynamic Threshold |
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| SHI Lichun.Performance Study of MOS Working in Dynamic Threshold[J].Modern Electronic Technique,2006,29(23):127-128,130. |
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| Authors: | SHI Lichun |
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| Abstract: | By tying gate and substrate of MOSFET together,a Dynamic Threshold MOS(DTMOS) is obtained.DTMOS has higher carrier mobility than the standard MOSFET.Furthermore,DTMOS threshold voltage drops when the gate voltage is raised,resulting in a much higher current drive than the standard device.In a word,DTMOS is a good candidate for very low voltage and low power. |
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| Keywords: | dynamic threshold performance study MOSFET gate |
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