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Preparation of c-BN films by RF sputtering and the relation of BN phase formation to the substrate bias and temperature |
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| Authors: | Y.N. Zhao B. Wang S. Yu Y.C. Tao Z. He D.M. Li G.T. Zou |
| Affiliation: | a National Laboratory of Superhard Materials, Jilin University, Changchun, Jilin 130023, China b Key Lab for Supermolecular Structure and Spectroscopy, Jilin University, Changchun, Jilin 130023, China |
| Abstract: | This paper deals with the deposition of cubic boron nitride (c-BN) films by radio frequency (RF) magnetron sputtering. The nearly pure c-BN films have been prepared on Si(100) substrates using hexagonal boron nitride (h-BN) targets. Argon gas mixed with nitrogen gas was used as sputtering gas. The deposited films were characterized by Fourier transform infrared (FTIR) spectroscopy and transmission electron diffraction (TED). A ‘temperature-bias' phase diagram has been worked out. It indicates that the c-BN phase prefers the relative high temperature and negative bias. An opinion was presented that the c-BN nuclei grow discontinuously with every time the ‘thermal spike' coming. |
| Keywords: | Ceramic coatings Cubic boron nitride Sputter deposition Magnetron sputtering Silicon wafers Phase diagrams Phase transitions Substrates Thermal effects Fourier transform infrared spectroscopy Electron diffraction Crystal orientation Transmission electron diffraction (TED) |
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