Crystalline structure of YSZ thin films deposited on Si(111) substrate by chemical vapor deposition |
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Authors: | Sang-Chul Hwang Hee-Gyoun Lee Hyung-Shik Shin |
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Affiliation: | (1) School of Chemical Engineering, Chonbuk National University, Chonju, 561-756 Chonbuk, Korea;(2) Superconductivity Research Department, Korea Atomic Energy Research Institute, P.O.Box 105, 305-600 Taejon, Korea |
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Abstract: | Yttria-stabilized zirconia (YSZ) thin films were formed on Si(111) substrate by chemical vapor deposition (CVD) in a temperature range of 650–800 °C using β-diketone metal chelates. The scanning electron microscopy (SEM) and X-ray diffraction (XRD) data evidenced that YSZ thin films have a smooth surface with fine grains and crystalline structure, respectively. The crystalline structure of YSZ films was affected by the deposition temperature. The X-ray photoelectron spectroscopy (XPS) data indicated that the YSZ film grows thick enough to prevent the diffusion of Si. |
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Keywords: | YSZ Thin Film Si Substrate CVD XPS XRD |
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