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泡沫碳化硅陶瓷表面原位生长碳化硅晶须
引用本文:曹小明,张劲松,胡宛平,杜庆洋.泡沫碳化硅陶瓷表面原位生长碳化硅晶须[J].材料研究学报,2006,20(3):291-294.
作者姓名:曹小明  张劲松  胡宛平  杜庆洋
作者单位:中国科学院金属研究所,沈阳市,110016;中国科学院金属研究所,沈阳市,110016;中国科学院金属研究所,沈阳市,110016;中国科学院金属研究所,沈阳市,110016
摘    要:采用固相和液相反应法在泡沫碳化硅陶瓷骨架表面原位生长碳化硅晶须,研究了催化剂和反应温度的影响.结果表明,催化剂氯化镍的作用使硅与碳直接反应生长出细长的碳化硅晶须.在适当的反应温度下生长的碳化硅晶须的表面光滑,线径比较大,有少量的呈弯曲状或竹节状;反应温度过高使得硅晶须的缺陷较多.在泡沫碳化硅陶瓷骨架的表面原位生长出碳化硅晶须属于LS生长机理.具有表面晶须的碳化硅陶瓷以深床体积过滤的方式用于过滤柴油机汽车尾气中的碳颗粒,表面晶须既能提高泡沫陶瓷过滤器的过滤能力,又有利于过滤器的再生.

关 键 词:泡沫碳化硅陶瓷  碳化硅晶须  原位生长
文章编号:1005-3093(2006)03-0291-04
收稿时间:09 11 2005 12:00AM
修稿时间:11 29 2005 12:00AM

The growth of SiC whiskers by in-situ on the surface of SiC foam ceramics
CAO Xiaoming,ZHANG Jinsong,HU Wanping,DU Qingyang.The growth of SiC whiskers by in-situ on the surface of SiC foam ceramics[J].Chinese Journal of Materials Research,2006,20(3):291-294.
Authors:CAO Xiaoming  ZHANG Jinsong  HU Wanping  DU Qingyang
Affiliation:Institute of Metal Research, Chinese Academy of Sciences, Shenyana 110016
Abstract:The SiC whiskers are grown by in-situ on the surface of SiC foam ceramics by liquid-solid (LS) mechanism. The influence of catalyst and reaction temperature on the SiC whiskers are analyzed. The results show that: with the effect of the catalyst NiCI, Si and C reaction directly and get the thin and long SiC whiskers. Under appropriate reactive temperature, the surface of the SiC whiskers are slick, the lenth-dia ratio is large, curly and multi-node shape are less; under higher reactive temperature, fault SiC whiskers are mostly. The grown mechanism of the SiC whiskers belongs to LS grown. The SiC foam ceramics which surface grown SiC whiskers purify the carbon grains exhausted by diesel in the "deep-bed" volume filtration way. The surface SiC whiskers may increase the purify efficiency. Furthermore, it is suitable for the filter regeneration.
Keywords:SiC foam ceramics  SiC whiskers  growth by in-situ
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