| AlF_3-MgF_2-SiO_2系低温共烧氧氟玻璃陶瓷性能研究 |
| |
| 引用本文： | 王睿,周济,李龙土,李勃.AlF_3-MgF_2-SiO_2系低温共烧氧氟玻璃陶瓷性能研究[J].电子元件与材料,2008,27(6):15-17. |
| |
| 作者姓名： | 王睿 周济 李龙土 李勃 |
| |
| 作者单位： | 清华大学,新型陶瓷材料与精细工艺国家重点实验室,北京,100084 |
| |
| 摘 要： | 制备了AlF3-MgF2-SiO2系低温共烧氧氟玻璃陶瓷材料,用XRD、SEM和阻抗分析仪等分析其烧结特性、显微结构、介电性能以及与Ag电极浆料共烧等性能。结果表明:该材料可以在900℃烧结致密化,烧成后的样品具有低的介电常数(6.2)和介质损耗(<0.002)、较低的热膨胀系数(7.4×10–6/K)、较高的弯曲强度(220 MPa)和热导率2.4 W/(m.K)],能够与Ag电极浆料共烧,是一种很有应用前景的低温共烧陶瓷基板和无源集成介质材料。
|
| 关 键 词： | 无机非金属材料 低温共烧陶瓷 氧氟玻璃 玻璃陶瓷 |
| 文章编号： | 1001-2028(2008)06-0015-03 |
| 修稿时间： | 2008年4月17日 |
Study on the properties of AlF_3-MgF_2-SiO_2 system low temperature co-fired oxyfluoride glass-ceramics |
| |
| WANG Rui,ZHOU Ji,LI Long-tu,LI Bo.Study on the properties of AlF_3-MgF_2-SiO_2 system low temperature co-fired oxyfluoride glass-ceramics[J].Electronic Components & Materials,2008,27(6):15-17. |
| |
| Authors: | WANG Rui ZHOU Ji LI Long-tu LI Bo |
| |
| Affiliation: | WANG Rui,ZHOU Ji,LI Long-tu,LI Bo(State Key Laboratory of New Ceramic , Fine Processing,Tsinghua University,Beijing 100084,China) |
| |
| Abstract: | The AlF3-MgF2-SiO2 low temperature co-fired oxyfluoride glass-ceramic system was prepared,and the sintering behavior,microstructure,dielectric properties and co-fired property with Ag electrode paste were studied by XRD、 SEM and impedance analytic meter etc.The results show that the oxyfluoride glass-ceramic material can be sintered at 900 ℃ with relative low dielectric constant(6.2),low dielectric loss(<0.002),low thermal expansion coefficient(7.4 ×10–6/K),high bending strength(220 MPa) and high thermal conductivity 2.4 W/(m.K)],the ceramics could be co-fired with silver electrode paste well.It is promising as a candidate of new dielectric material for LTCC substrate or passive integration. |
| |
| Keywords: | non-metallic inorganic material low temperature co-fired ceramic oxyfluoride glass glass-ceramic |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
