| Abstract: | Long-channel Ge pMOSFETs and nMOSFETs were fabricated with high-kappa CeO2/HfO2/TiN gate stacks. CeO2 was found to provide effective passivation of the Ge surface, with low diode surface leakage currents. The pMOSFETs showed a large I ON/IOFF ratio of 106, a subthreshold slope of 107 mV/dec, and a peak mobility of approximately 90 cm2 /Vmiddots at 0.25 MV/cm. The nMOSFET performance was compromised by poor junction formation and demonstrated a peak mobility of only ~3 cm2/Vmiddots but did show an encouraging ION/I OFF ratio of 105 and a subthreshold slope of 85 mV/dec |
