Kinetic Study of MOCVD Ⅲ-Ⅴ Quaternary Antimonides |
| |
作者姓名: | Peng Ruiwu Wei Guangyu |
| |
作者单位: | Peng Ruiwu,Wei Guangyu and Wu WeiShanghai Institute of Metallurgy,Chinese Academy of Sciences,Shanghai 200050,China Wang ZhanguoInstitute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
| |
基金项目: | National Advanced Materials Connites of China,, |
| |
摘 要: | 1IntroductionTheGaInAsSbandAlGaAsSbquaternaryaloysmatchedtoGaSbsubstrateshaveagreatpotentialityforlongwavelengthoptoelectr...
|
关 键 词: | Kinetic study MOCVD Ⅲ Ⅴ Quaternary antimonide Photodetector |
本文献已被 CNKI 万方数据 等数据库收录! |