A submilliampere-threshold multiquantum-well AlGaAs laser withoutfacet coating using single-step MOCVD |
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| Authors: | Narui H. Hirata S. Mori Y. |
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| Affiliation: | Sony Corp. Res. Center, Yokohama; |
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| Abstract: | An extremely low threshold current, of 0.88 mA under continuous wave (CW) operation was obtained for a three-quantum-well AlGaAs-GaAs laser without facet coating at room temperature. This laser was fabricated using only single-step metalorganic chemical vapor deposition (MOCVD) on a nonplanar GaAs substrate. The energy conversion efficiency from input electric power to light output power was 42% at 1 mW/facet, which is the highest value for all types of lasers. The laser beam shape was nearly round with an aspect ratio of 0.86 |
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