Junction Stability in Ion-Implanted Mercury Cadmium Telluride |
| |
Authors: | D Chandra HF Schaake MA Kinch |
| |
Affiliation: | (1) DRS Infrared Technologies, P.O. Box 740188, Dallas, TX 75374, USA |
| |
Abstract: | Ion implantation into HgCdTe results in the production of Hg interstitials, which can be subsequently driven into the HgCdTe
by an annealing process. This diffusive drive-in of the Hg interstitials fills vacancies and kicks out group I impurities
and results in the formation of an n–p junction. In this work we report on the production of interstitials during baking subsequent to the ion implantation process.
Various concentrations of metal vacancies were first introduced into mid-wavelength infrared (MWIR, 3 μm to 5 μm) HgCdTe by annealing under tellurium-saturated conditions at various temperatures. Baking subsequent to planar implantation
of boron produced n–p junctions whose depths were measured by defect etching. The results were modeled using a simple diffusion limited model from
a fixed surface concentration. The surface concentration was allowed to decrease exponentially to zero after a time, found
to be of the order of ∼80 h to 150 h. Exhaustion of the interstitials sources produced by the implantation was nearly complete
after ∼400 h. The total number of mercury interstitials produced was approximately 50% of the implant dosage. |
| |
Keywords: | Mercury cadmium telluride infrared detector ion implantation mercury interstitials mercury vacancies diode formation bake stability |
本文献已被 SpringerLink 等数据库收录! |