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MEMS高温压力传感器研究与进展
引用本文:张冬至,胡国清,陈昌伟.MEMS高温压力传感器研究与进展[J].仪表技术与传感器,2009(11).
作者姓名:张冬至  胡国清  陈昌伟
作者单位:华南理工大学机械与汽车工程学院,广东广州,510641
摘    要:MEMS高温压力传感器随着新型半导体材料和加工工艺的不断深入研究而迅速发展,近年来这一研究方向涌现出不少研究成果.对国内外具有主导影响的多晶硅、SOI、SOS、金刚石薄膜、SiC、电容式、声表面波、光纤式等几类耐高温压力传感器的研究进展、技术关键及应用情况等做回顾论述,并针对各自的主要优缺点进行对比分析和讨论,最后展望了高温压力传感器的发展趋势.

关 键 词:高温  压力传感器  多晶硅  碳化硅  金刚石薄膜  声表面波  光纤

Research and Progress of MEMS High-temperature Pressure Sensors
ZHANG Dong-zhi,HU Guo-qing,CHEN Chang-wei.Research and Progress of MEMS High-temperature Pressure Sensors[J].Instrument Technique and Sensor,2009(11).
Authors:ZHANG Dong-zhi  HU Guo-qing  CHEN Chang-wei
Abstract:MEMS high-temperature pressure sensors has a rapid development and appeared lots of research achievements with the deep exploitation of novel semiconductor materials and processing techniques in recent years. The recent progress, key technologies and applications of several dominant high-temperature pressure sensors at home and abroad is reviewed, including poly-Si, SOI, SOS, diamond film, SiC, capacitance, surface acoustic wave, optic-fiber high-temperature pressure sensors, and the advantages and drawbacks upon them is analyzed, lastly the future development of high-temperature pressure sensor is presented.
Keywords:high-temperature  pressure sensor  poly-silicon  silicon carbon  diamond film  surface acoustic wave  optic-fiber
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