| 用XPS法研究硫化锌薄膜 |
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| 引用本文： | 陈振湘,柳兆洪.用XPS法研究硫化锌薄膜[J].固体电子学研究与进展,1996,16(3):297-301. |
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| 作者姓名： | 陈振湘 柳兆洪 |
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| 作者单位： | 厦门大学物理学系 |
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| 摘 要： | 运用ＸＰＳ法研究ＺｎＳ：Ｃｕ，Ｃｌ，Ｅｒ薄膜器件的界面态及所掺激活剂的纵向分布，认为氧吸附形成的ＺｎＳ薄膜的表面构态是产生薄膜界面态和界面陷阱能级的主要原因，对研究薄膜器件的激发过程有参考意义。
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| 关 键 词： | 薄膜，氧吸附，界面态 |
Investigation of Zinc Sulfide Thin Film with XPS Analysis Method |
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| Chen Zhenxiang, Liu Zhaohong,Liu Ruitang, Wang Yujiang, Qiu Weibin.Investigation of Zinc Sulfide Thin Film with XPS Analysis Method[J].Research & Progress of Solid State Electronics,1996,16(3):297-301. |
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| Authors: | Chen Zhenxiang Liu Zhaohong Liu Ruitang Wang Yujiang Qiu Weibin |
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| Abstract: | The interface states in ZnS:Cu,Cl,Er thin film and the longitudinal distribution of the activators doped in the film are investigated with XPS analysis method in this paper.It is considered that the surface structure states fromed by oxygen absorption are the main cause of inducing interface states and energy levels of interface traps.The results are referable in study of the electroluminescent excitation process of the thin film devices. |
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| Keywords: | Thin Film Oxygen Absorption Interface States |
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