20—80keV Ar~+离子对稀释Si(Co,Ta)合金的溅射

荷能离子对单元素的溅射已有较好的理论解释,但是对多元合金或化合物溅射的研究才开始不久,目前尚无一个能够成功地解释实验现象的理论。 溅射后合金样品近表面组成的改变,是一种有趣的实验现象。实验中发现三元合金的现象比二元合金更为复杂,例如,元素的近表面改变与溅射离子的能量有关,这是用现有的择优溅射理论无法解释的。为研究这种现象,我们选取了Si(Co,Ta)三元合金,在分别用20到

Sputtering of the dilute Si (Co, Ta) alloy with 20-80 keV Ar~+ ions

The study of alloy and compound sputtering is very important to applications of material sputtering phenomena and to the theory of atomic collision. The surface layer compositional change of sample under sputtering is an interesting one of many sputtering phenomena. In order to observe this phenomenon and to study its characteristic, we selected the ternary alloy system Si(Co, Ta). The samples were sputtered individually with 20-80 keV Ar+ ions. Then we studied how the surface large compositional change had depended on the energy of Ar+ ions.