Size and shape modification of self assembled InAs quantum dots and stacked layers by in-situ etching |
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| Affiliation: | 1. Shandong Medical Imaging Research Institute, Shandong University, Jinan, China;2. Russell H. Morgan Department of Radiology and Radiological Science, The Johns Hopkins University School of Medicine, Baltimore, MD, USA;3. FM Kirby Center for Functional Brain Imaging, Kennedy Krieger Institute, Baltimore, MD, USA;4. The Central Hospital of Jinan City, Shandong University, Jinan, China;5. College of Electronics and Information Engineering, Sichuan University, Chengdu, China;1. Plant Sciences and Agrotechnology Division, CSIR-Indian Institute of Integrative Medicine, Canal Road, Jammu 180001, India;2. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India;3. Department of Botany and Microbiology, HNB Garhwal University, Srinagar, Garhwal 246174, Uttarakhand, India |
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| Abstract: | We present investigations of the structural and optical properties of in-situ etched, self assembled InAs islands using AsBr3 within a molecular beam epitaxy system. This procedure allows reshaping and downsizing of quantum dots with atomic layer precision. The critical thickness of a second InAs layer on top of a thin GaAs layer covering a first InAs dot layer was investigated by RHEED using the 2D–3D transition due to the Stranski–Krastanov growth mode. In-situ etching of the GaAs spacer layer results in an array of small dips on the surface due to enhanced etching at locally strained areas. The dips influence the nucleation of the second dot layer. |
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