Morphological instabilities during homoepitaxy on vicinal GaAs(110) surfaces |
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| Affiliation: | 1. Semiconductor Materials IRC, Imperial College, London SW7 2AB, UK;2. Instituto de Ciencia de Materiales de Madrid (C.S.I.C.), Cantoblanco, 28049 Madrid, Spain;3. Institute of Physics of the ASCR, Cukrovarnická 10, 162 53 Praha 6, Czech Republic;1. Department of Physics, Pohang University of Science and Technology, Pohang, 37673, South Korea;2. National Institute for Materials Science, Tsukuba, 305-0044, Japan;1. Department of Physics, University of Calabria, via ponte Bucci, 31/C, 87036 Rende (CS), Italy;2. NEST, Istituto Nanoscienze–CNR and Scuola Normale Superiore, Piazza San Silvestro 12, Pisa I-56127, Italy;3. Department of Chemistry, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea;4. Theoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, 620002 Ekaterinburg, Russia;1. School of Life Science and Technology, Tongji University, Shanghai 200092, China;2. Collaborative Innovation Center of Chemistry for Energy Material, Shanghai Key Laboratory of Molecular Catalysts and Innovative Materials, Department of Chemistry, Fudan University, Shanghai 200433, China;1. National Institute of Technology Delhi, Electronics and Communication Engineering Department, 110040, India;2. National Institute of Technology Delhi, Department of Applied Sciences, 110040, India;3. Indian Institute of Technology Roorkee, Electronics and Communication Engineering Department, 247667, India;1. Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain;2. Institute for Physical Chemistry, University of Göttingen, 37077 Göttingen, Germany;3. Max Planck Institute for Biophysical Chemistry, 37077 Göttingen, Germany;4. Instituto “Nicolás Cabrera”, Universidad Autónoma de Madrid, 28049 Madrid, Spain;5. Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid, Spain;6. International Center for Advanced Studies of Energy Conversion, University of Göttingen, 37077 Göttingen, Germany |
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| Abstract: | Growth of GaAs by molecular beam epitaxy on (110) substrates vicinal to (111)A has been systematically studied by atomic force and Nomarski microscopy at different As/Ga flux ratios, substrate temperatures and growth rates. Depending on the growth conditions, a striking variety of morphological instabilities have been found that range from step bunching in the Ga-supply limited regime to creation of long-range, well-ordered patterns of three-dimensional pyramidal features on the surface under As-deficient conditions. We discuss the microscopic origin of the morphological instabilities and self-organization of the surface features in terms of growth modes, relative adatom populations and step-attachment probabilities. |
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