Optical and morphological properties of In(Ga)As/GaAs quantum dots grown on novel index surfaces |
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| Affiliation: | 1. Instituto Nazionale Fisica della Materia and Dipartimento di Scienza dei Materiali, Università degli Studi, Via Emanueli 15, Milan I-20126, Italy;2. Department of Physics, University of Nottingham, University Park, Nottingham NG7 2RD, UK;1. Interdisciplinary Institute for Technological Innovation (3IT), CNRS UMI-3463, Laboratory for Quantum Semiconductors and Photon-based BioNanotechnology, Department of Electrical and Computer Engineering, Université de Sherbrooke, 3000, boul. de l’Université, Sherbrooke, Québec J1K 0A5, Canada;2. Biotechnology Laboratory, Environmental Health Science and Research Bureau, Healthy Environments and Consumer Safety Branch, Environmental Health Centre, Health Canada, Ottawa, Ontario K1A 0K9, Canada;1. Centre of Research in Nanotechnology & Science, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India;2. Center of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India;3. Center for Quantum Devices, Northwestern University, United States;4. Department of Electrical and Computer Engineering, UW-Madison, WI, United States |
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| Abstract: | Optical and morphological properties of self assembled In(Ga)As/GaAs quantum dot systems, grown on high index (N11) substrates, for a wide range of orientations, coverages and compositions, are presented and reviewed. The use of high Miller index substrate orientations permits to intervene on major quantum dots properties such as shape, size distribution, transition energy and emission polarisation, thus opening a wide range of device design opportunities. |
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