Thermal vaporization and deposition of gallium oxide in hydrogen |
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| Affiliation: | 1. State Key Laboratory of Environmental Geochemistry, Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550081, China;2. University of Chinese Academy of Sciences, Beijing 100049, China;3. Géoscience Environnement Toulouse, CNRS (UMP 5563)-OMP-Université Paul-Sabatier, 14, Avenue Édouard Belin, 31400 Toulouse, France;4. Laboratorio di Geochimica at DIPTERIS, Università di Genova, Corso Europa 26, 16132 Genova, Italy;5. Laboratoire de Geochimie et Cosmochimie, Institute de Physique du Globe de Paris (IPGP), 75252 Paris, France;1. ITMO University, St. Petersburg, Russia;2. Ioffe Institute, St. Petersburg, Russia;3. Perfect Crystals LLC, St. Petersburg, Russia;1. UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, South Africa;2. Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset, Western Cape, South Africa;3. Debre Berhan University, Department of Chemistry, P.O. Box 445, Debre Berhan, Ethiopia;4. Debre Berhan University, Department of Physics, P.O. Box 445, Debre Berhan, Ethiopia;5. Adigrat University, Department of Physics, P.O. Box 50, Adigrat, Ethiopia;6. iThemba LABS, National Research Foundation, P.O. Box 722, Somerset West 7129, South Africa;7. Institute of Inorganic Chemistry, University of Cologne, Greinstr. 6, 50939 Cologne, Germany;8. Department of Chemistry, University of South Africa, Florida, South Africa;1. The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, China;2. College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China;1. Amity Institute of Nanotechnology, Amity University, Noida 201301, India;2. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India;3. UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452017, Madhya Pradesh, India;4. Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, India |
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| Abstract: | The thermodynamics of gallium oxide vaporization and deposition in Ar–6% H2 at elevated temperatures are described. It is shown that Ga2O3 vaporizes in H2 as Ga2O(g) at elevated temperatures. During thermal processing the Ga2O(g) moves to cooler zones of the furnace, back reacts with H2(g) and H2O(g) and condenses out as Ga(l) and Ga2O3(s). Upon removal from the furnace, the exposed Ga forms a ubiquitous surface oxide of Ga2O3. X-ray photoelectron spectroscopy (XPS) was used to examine heat treated Ga2O3 powders and vaporization products deposited onto SiO2 and Cu substrates. In agreement with the thermodynamic predictions, these data demonstrate that the deposition product contained Ga2O3 and metallic Ga. Analysis of the XPS spectra also revealed an intermediate oxidation state for Ga. The precise bonding of this state could not be demonstrated conclusively, but it is suggested that it may be solid Ga2O. For coherent product deposition on Cu the metallic Ga concentration increases and the Ga2O3 concentration decreases with sputtering depth, suggesting the metallic Ga in the outermost layers of the deposit is readily oxidized during air exposure. |
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