| Homo-and Hetero-epitaxial GaSb Layers by MOCVD |
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| 引用本文： | 张宝林,周天明,蒋红,金亿鑫,洪春荣,元金山,缪国庆. Homo-and Hetero-epitaxial GaSb Layers by MOCVD[J]. 稀有金属(英文版), 1992, 0(2) |
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| 作者姓名： | 张宝林 周天明 蒋红 金亿鑫 洪春荣 元金山 缪国庆 |
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| 作者单位： | Changchun Institute of Physics Academia Sinica，Changchun 130021，P.R.China，Changchun Institute of Physics，Academia Sinica，Changchun 130021，P.R.China，Changchun Institute of Physics，Academia Sinica，Changchun 130021，P.R.China，Changchun Institute of Physics，Academia Sinica，Changchun 130021，P.R.China，Changchun Institute of Physics，Academia Sinica，Changchun 130021，P.R.China，Changchun Institute of Physics，Academia Sinica，Changchun 130021，P.R.China，Changchun Institute of Physics，Academia Sinica，Changchun 130021，P.R.China |
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| 摘 要： | Metalorganic chemical vapor deposition(MOCVD) growth of homo-and hetero-epitaxial GaSb has beeninvestigated,by using trimethylgallium(TMGa)and trimetbylantimony(TMSb)as source materials on n-typeGaSb and semi-insulating GaAs substrates.The influence of Ⅲ/Ⅴ ratio on the growth of GaSb was studiedin detail and it was found that the Ⅲ/Ⅴ ratio range proper for good quality epi-layers is narrow.The carriermobility and concentration of undoped GaSb epi-layers are about 600 cm~2/Ⅴ·s and 2～4×10~(16)cm~(-3)atroom temperature,respectively.The low temperature(77K)mobility is about 5 times of the roomtemperature's one.The low temperature(11K)photoluminescence(PL)spectrum and the temperature depen-dence of PL spectrum were investigated.The red shift of bound exciton with temperature was observed.
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Homo-and Hetero-epitaxial GaSb Layers by MOCVD |
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| Zhang Baolin,Zhou Tianming,Jiang Hong,Jin Yixin,Hong Chunrong,Yuan Jinshan,Miao Guoqing Changchun Institute of Physics,Academia Sinica,Changchun ,P.R.China. Homo-and Hetero-epitaxial GaSb Layers by MOCVD[J]. Rare Metals, 1992, 0(2) |
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| Authors: | Zhang Baolin Zhou Tianming Jiang Hong Jin Yixin Hong Chunrong Yuan Jinshan Miao Guoqing Changchun Institute of Physics Academia Sinica Changchun P.R.China |
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| Affiliation: | Zhang Baolin,Zhou Tianming,Jiang Hong,Jin Yixin,Hong Chunrong,Yuan Jinshan,Miao Guoqing Changchun Institute of Physics,Academia Sinica,Changchun 130021,P.R.China |
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| Abstract: | |
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| Keywords: | MOCVD GaSb Epitaxial growth Hall measurement PL Red shift |
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