Stacked inductors and transformers in CMOS technology |
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Authors: | Zolfaghari A. Chan A. Razavi B. |
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Affiliation: | Dept. of Electr. Eng., California Univ., Los Angeles, CA; |
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Abstract: | A modification of stacked spiral inductors increases the self-resonance frequency by 100% with no additional processing steps, yielding values of 5 to 266 nH and self-resonance frequencies of 11.2 to 0.5 GHz. Closed-form expressions predicting the self-resonance frequency with less than 5% error have also been developed. Stacked transformers are also introduced that achieve voltage gains of 1.8 to 3 at multigigahertz frequencies. The structures have been fabricated in standard digital CMOS technologies with four and five metal layers |
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