| 稀土Nd掺杂纳米SnO_2薄膜气敏特性 |
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| 引用本文： | 高燕,李健,吉雅图,韩菲.稀土Nd掺杂纳米SnO_2薄膜气敏特性[J].传感器与微系统,2005,24(6):29-31. |
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| 作者姓名： | 高燕 李健 吉雅图 韩菲 |
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| 作者单位： | 内蒙古大学,理工学院,物理系,内蒙古,呼和浩特,010021 |
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| 摘 要： | 用真空气相沉积法在玻璃衬底上制备纯SnO2和掺稀土Nd的SnO2薄膜,在500℃氧气气氛条件下进行45min热处理,获得良好的纳米SnO2薄膜和掺稀土Nd的SnO2薄膜。结果显示掺Nd和热处理使纳米SnO2薄膜的结构、导电性能得到一定的改善。掺Nd5%的SnO2薄膜对气体的选择性和灵敏性均得到明显的改善,其中,对丁烷的选择性、灵敏度最好,在体积分数为7.2×10-3时,灵敏度可达到340,但对乙醇、丙酮气体的敏感性较差。
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| 关 键 词： | 纳米 真空气相沉积 气敏特性 SnO_2薄膜 Nd掺杂 |
| 文章编号： | 1000-9787(2005)06-0029-03 |
| 修稿时间： | 2004年12月26日 |
Gas sensing properties of SnO2 nanometer films by Nd-doped |
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| GAO Yan,LI Jian,JI Ya-tu,HAN Fei.Gas sensing properties of SnO2 nanometer films by Nd-doped[J].Transducer and Microsystem Technology,2005,24(6):29-31. |
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| Authors: | GAO Yan LI Jian JI Ya-tu HAN Fei |
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| Abstract: | SnO_2 thin films and Nd-doped SnO_2 thin films are prepared by vacuum evaporation on glass substrates to obtain the nano-SnO_2 films at 500℃ with 45min of heat-treatment in O_2.The results show that the structure and electric characteristics of the nano-SnO_2 films are improved by heat-treatment and doping,the gas selectivity and gas sensitivity characteristics of SnO_2 films by doping 5% Nd are also improved.The maximum sensitivity of above SnO_2 thin films to butane can increase up to 340 at volume fraction of 7.2×10 -3 .But the sensitivity to alcohol,acetone is low. |
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| Keywords: | nanometer vapor phase deposition gas sensing property SnO_2 thin films Nd-doping |
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