Controlled growth of quasibicrystal zinc oxide structures |
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Authors: | B. M. Ataev I. K. Kamilov A. M. Bagamadova V. V. Mamedov S. Sh. Makhmudov A. K. Omaev Sh. O. Shakhshaev |
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Affiliation: | (1) Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, Makhachkala, Dagestan, Russia |
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Abstract: | The first results on the controlled growth of quasibicrystal structures containing interblock boundaries in epitaxial zinc oxide layers on sapphire (α-Al2O3) are reported. The structures with boundaries oriented in a preset direction can be used as a base for submicron microelectronic devices. Using the method of buffer layers, it is possible to obtain highly oriented layers of (11[`2]0)ZnO(11bar 20)ZnO and (0001)ZnO with clear boundaries between blocks on the same (10[`1]2)Al2 O3(10bar 12)Al_2 O_3 substrate surface. Data on the features of structure and morphology of these layers are presented. |
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