Controlled growth of quasibicrystal zinc oxide structures

The first results on the controlled growth of quasibicrystal structures containing interblock boundaries in epitaxial zinc oxide layers on sapphire (α-Al₂O₃) are reported. The structures with boundaries oriented in a preset direction can be used as a base for submicron microelectronic devices. Using the method of buffer layers, it is possible to obtain highly oriented layers of (11[`2]0)ZnO(11bar 20)ZnO and (0001)ZnO with clear boundaries between blocks on the same (10[`1]2)Al₂ O₃(10bar 12)Al_2 O_3 substrate surface. Data on the features of structure and morphology of these layers are presented.