Electronic structures of Mg3Pn2 (Pn=N, P, As, Sb and Bi) and Ca3N2 calculated by a first-principle pseudopotential method

Electronic structure calculations for Mg₃N₂, Mg₃P₂, Mg₃As₂ (low and high temperature modifications), Mg₃Sb₂, Mg₃Bi₂, and Ca₃N₂ have been performed. Mg₃Sb₂ is predicted to be an indirect semiconductor with the gap value of about 0.41 eV. Mg₃As₂ with a high temperature modification is also predicted to be a semiconductor with the gap value of about 1.1 eV, but the valence band maximum and the conduction band minimum of Mg₃Bi₂ contacts at Γ which would make it a semimetal. Mg₃N₂, Mg₃P₂, and Mg₃As₂ (low temperature phase) are semiconductors with the direct band gaps of 1.64 eV, 1.73 eV, and 1.57 eV, respectively. Ca₃N₂ is a semiconductor with a gap of about 1.2 eV.