Variation in ferroelectric polarization direction of epitaxial (001) SrBi2Ta2O9 thin film induced by oxygen vacancy |
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| Authors: | Jong Yeog Son Wan Joo Maeng Woo-Hee Kim |
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| Affiliation: | 1. Department of Applied Physics, College of Applied Science, Kyung Hee University, 1732 Deogyeong-daero, Giheung-Gu, Yongin-City 446-701, Republic of Korea;2. Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, WI 53706, USA;3. Process Development Team, System LSI Division, Samsung Electronics, San #24 Nongseo-Dong, Giheung-Gu, Yongin-City 446-711, Republic of Korea |
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| Abstract: | We report the enhancement of c-axis ferroelectric properties in an epitaxial (001) SrBi2Ta2O9 (SBT) thin film originating from the oxygen vacancy. We controlled the oxygen vacancy in the SBT thin film by using the electrical stress process triggering the polarization fatigue. As a result of the fatigue test for the Pt/SBT/Nb:STO capacitor, we observed the gradual increase in the ferroelectric polarization up to 1012 fatigue cycles and then subsequently rapid decrease over 1012 cycles. Based on piezoresponse force microscopy (PFM) measurements, we demonstrated the increase in the polarization and PFM signal resulting from the creation of oxygen vacancy. |
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| Keywords: | C Fatigue C Ferroelectric properties Epitaxial SBT film PFM |
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