| 多晶硅薄膜的新型激光晶化制备方法 |
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| 引用本文： | 曾祥斌,徐重阳,戴永兵,王长安,周雪梅,赵伯芳.多晶硅薄膜的新型激光晶化制备方法[J].电子元件与材料,2000,19(1). |
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| 作者姓名： | 曾祥斌 徐重阳 戴永兵 王长安 周雪梅 赵伯芳 |
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| 摘 要： | 采用两步激光晶化方法制备了多晶硅薄膜 ,其晶粒尺寸为 1.1μm,比用传统单步晶化制备的薄膜晶粒尺寸大 ,表明该方法对扩大晶粒尺寸很有效。拉曼光谱分析表明 0 .30 J/ cm2晶化的薄膜结晶程度已很高
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| 关 键 词： | 多晶硅薄膜 拉曼光谱 激光晶化制备方法 |
Polycrystalline silicon thin film fabricated with novel laser crystallization. |
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| ZENG Xiang-bin,XU Zhong-yang,DAI Yong-bing,WANG Chang-an,ZHOU Xue-mei,ZHAO Bo-fang.Polycrystalline silicon thin film fabricated with novel laser crystallization.[J].Electronic Components & Materials,2000,19(1). |
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| Authors: | ZENG Xiang-bin XU Zhong-yang DAI Yong-bing WANG Chang-an ZHOU Xue-mei ZHAO Bo-fang |
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| Abstract: | In Chinese Polycrystalline silicon thin film is fabricated with a novel technique-two step laser crystallization The grain size of the film is 1 1 μm, better than that of the film fabricated with conventional single step laser crystallization The new approach is effective for enlarging grain size and improving the performances the transistor of the new film (4 refs ) |
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| Keywords: | polycrystalline silicon thin film Raman spectra laser crystallization |
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