Quantitative off-axis electron holography of GaAs p-n junctions prepared by focused ion beam milling |
| |
| Authors: | D COOPER R TRUCHE AC TWITCHETT-HARRISON† RE DUNIN-BORKOWSKI† & PA MIDGLEY† |
| |
| Affiliation: | CEA LETI - Minatec, 17 rue des Martyrs, 38054 Grenoble, Cedex 9, France;Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK |
| |
| Abstract: | Focused Ion beam (FIB) prepared GaAs p-n junctions have been examined using off-axis electron holography. Initial analysis of the holograms reveals an experimentally determined built-in potential in the junctions that is significantly smaller than predicted from theory. In this paper we show that through combinations of in situ annealing and in situ biasing of the specimens, by varying the intensity of the incident electron beam, and by modifying the FIB operating parameters, we can develop an improved understanding of phenomena such as the electrically 'inactive' thickness and subsequently recover the predicted value of the built-in potential of the junctions.
PACS numbers: 85.30.De |
| |
| Keywords: | Dopant profiling focused ion beam milling GaAs off-axis electron holography |
|
|
