氧分压对直流磁控溅射铟锡氧化物(ITO)导电薄膜结构和性能的影响

通过直流磁控溅射热等静压铟锡氧化物(ITO)靶材制备ITO导电薄膜,并且针对O2-Ar混合气氛中氧的分压对ITO膜的结构、表面形貌、透光率以及导电率的影响进行了研究.结果表明,在低氧分压的条件下溅射,膜的(400)面非常显著地择优取向平行于玻璃表面,而随着氧分压的升高却表现为膜的(222)面择优取向平行于玻璃表面.同时,随着氧分压的升高,膜的表面粗糙度变小,膜的结构变得更细腻.膜的可见光透过率在氧分压增大的情形下有少许增大,但是膜的导电率却略有下降.

Effects of Oxygen Partial Pressure on the Microstructures and Properties of Indium - Tin Oxide Films Prepared by DC Sputtering Method

Indium-Tin oxide transparent conductive films were prepared by DC sputtering method using hot-isostatic pressed ITO target,and the effects of oxygen partial pressure on the microstructures and properties of Indium-Tin oxide films were studied.As the results showed,the(400)face of ITO films tended to grow to be parallel to the face of glasses when prepared at low O2 partial pressure,and the(222)face of ITO films tended to grow to be parallel to the face of glasses when prepared at higher O2 partial pressure.Moreover,the roughness of the films tended to become smaller and the microstructures tended to become finer with the increasing of O2 partial pressure,and the optical transmittance of the films tended to become higher and the electro-conductivities tended to become lower with the increasing of O2 partial pressure.