In situ growth of one-dimensional carbon-rich SiC nanowires in porous Sc2Si2O7 ceramics with excellent microwave absorption properties |
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Authors: | Hanjun Wei Xiaowei Yin Xiaolin Dang Litong Zhang Laifei Cheng |
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Affiliation: | Science and Technology on Thermostructural Composite Materials Laboratory, Northwestern Polytechnical University, 710072 Xi’an, China |
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Abstract: | For enhancing the absorption ability of dielectric and electromagnetic wave (EMW), C-rich SiC NWs /Sc2Si2O7 ceramics are successfully fabricated through in-situ growth of SiC nanowires (NWs) into porous Sc2Si2O7 ceramics by precursor infiltration and pyrolysis (PIP) at 1400?°C in Ar. SiC NWs are in-situ formed in the pore channels via a vapor-liquid-solid (VLS) mechanism, the relative complex permittivity increases notably with the content of absorber (C-rich SiC NWs), which tune the microstructure and dielectric property of C-rich SiC NWs/Sc2Si2O7 ceramics. Meanwhile, the minimum reflection coefficient (RC) of C-rich SiC NWs/Sc2Si2O7 ceramic decreases from ?9.5?dB to ??35.5?dB at 11?GHz with a thickness of 2.75?mm, and the effective absorption bandwidth (EAB) covers the whole X band (8.2–12.4?GHz) when the content of absorber is 24.5?wt%. The results indicate that Sc2Si2O7 ceramics decorated with SiC NWs and nanosized carbon have a superior microwave-absorbing ability, which can be contributed to the Debye relaxation, interfacial polarization and conductivity loss enhanced by in-situ formed SiC NWs and nanosized carbon phases. The C-rich SiC NWs /Sc2Si2O7 ceramics can be a promising microwave absorbing materials within a broad bandwidth. |
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Keywords: | C-rich SiC NWs Precursor infiltration and pyrolysis (PIP) Microwave absorption properties |
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