A high-performance thin-film transistor with a vertical offsetstructure |
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Authors: | Chun-Yen Chang Chiung-Wei Lin |
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Affiliation: | Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu ; |
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Abstract: | In this study, we propose a novel device structure combined with conventional hydrogenated amorphous silicon (a-Si:H) for the source and drain regions and microcrystalline silicon (μc-Si:H) for the channel region to obtain a high-performance thin-film transistor (TFT). This is a vertical a-Si:H offset structure used to suppress OFF-state current to a small value which is comparable to the conventional a-Si:H TFTs with a much higher drivability. The fabrication process is simple, low temperature (⩽300°C), and low cost, with a potential for high reliability |
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